Bourns’ SRP2512CL and SRP3212CL power inductors deliver reduced losses and high efficiency to meet DDR5 memory specifications ...

The inductors deliver the same performance as larger ones while saving space—ideal for making smartphones and wearables smaller and faster.

It is shown that the difference between the inductance calculated with the FEM in 2-D and that computed with the method of images decreases as the number of layers of images increases. Also, it is ...

The selection of materials for the new inductor greatly improves efficiency and permits the potential of the new TLVR topology to be fully exploited. The device is ideal for TLVR applications and is ...

Vishay Intertechnology, Inc. (NYSE: VSH) has announced the release of the SiEH4800EW, an 80 V TrenchFET® Gen IV n-channel ...

Toshiba has released four 650-V third-generation SiC MOSFETs in compact 8×8-mm DFN packages. The surface-mount DFN reduces ...

To provide higher efficiency for industrial applications, Vishay Intertechnology has introduced a new 80 V TrenchFET Gen IV n ...

Toshiba Electronic Devices & Storage Corporation ("Toshiba") ने अपने नवीनतम चार ... This press release features multimedia.

The connection between a crumpled sheet of paper and quantum technology: A research team at the EPFL in Lausanne (Switzerland) and the University of Konstanz (Germany) uses topology in microwave ...

Fyne Audio's FS704SP speaker is built in Scotland and has the power and dynamics of the brand's F704 speaker but with some extensive refinements and sonic enhancements.

Abstract: In this letter, an accurate model for the inductance of 3-D integrated inductor based on through silicon via is proposed. The model, considering both the internal inductance and detailed ...

Institute of Smart City and Intelligent Transportation, Southwest Jiaotong University, Chengdu 610031, China Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of ...